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Polar Gaussian Processes for Predicting on Circular Domains
Polar Gaussian Processes for Predicting on Circular Domains

PDF) Conception and optimization of new architecture for high performance organic field effect transistors
PDF) Conception and optimization of new architecture for high performance organic field effect transistors

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION
RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION

Tensile-strained germanium microdisks with circular Bragg reflectors
Tensile-strained germanium microdisks with circular Bragg reflectors

PDF) New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node | M. Veillerot - Academia.edu
PDF) New techniques to characterize properties of advanced dielectric barriers for sub-65nm technology node | M. Veillerot - Academia.edu

Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics
Reliability challenges accompanied with interconnect downscaling and ultra low-k dielectrics

Ultrahigh-sensitivity optical power monitor for Si photonic circuits
Ultrahigh-sensitivity optical power monitor for Si photonic circuits

Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement

Dual-polarization O-band silicon nitride Bragg filters with high extinction ration
Dual-polarization O-band silicon nitride Bragg filters with high extinction ration

Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement | Scientific.Net
Advanced Surface Cleaning Strategy for 65nm CMOS Device Performance Enhancement | Scientific.Net

The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre
The Role of a Physical Analysis Laboratory in a 300 mm IC Development and Manufacturing Centre

PDF) High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond
PDF) High performance UTBB FDSOI devices featuring 20nm gate length for 14nm node and beyond

Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching
Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching

Garage Di Marino - Garage automobile, 142 r Jean Monnet, 38920 Crolles (France) - Adresse, Horaire
Garage Di Marino - Garage automobile, 142 r Jean Monnet, 38920 Crolles (France) - Adresse, Horaire

Crolles 1 et Crolles 2
Crolles 1 et Crolles 2

Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations.
Gold Wire Bonding Induced Peeling in Cu/Low-k Interconnects: 3D Simulation and Correlations.

STMICROELECTRONICS - 850 Rue Jean Monnet, Crolles, Isère, France - Yelp
STMICROELECTRONICS - 850 Rue Jean Monnet, Crolles, Isère, France - Yelp

Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin
Integration of ALD TaN barriers in porous low-k interconnect for the 45 nm node and beyond; solution to relax electron scatterin

▷ ObjectifCode - Centre d'examen du code de la route Crolles
▷ ObjectifCode - Centre d'examen du code de la route Crolles

Evaluation for Intra-Word Faults in Word-Oriented RAMs
Evaluation for Intra-Word Faults in Word-Oriented RAMs

Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development